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MRF6VP21KHR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
Note:
Each side of device measured separately.
1
100
1
TC
=25°C
10
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
100
TJ
= 200°C
TJ
= 175°C
TJ
= 150°C
Note:
Each side of device measured separately.
26
10
10
80
100
24
22
20
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
23
21
19
1000 2000
Gps
20
25
Pulse Width = 100
μsec, Duty Cycle = 20%
VDD
=50Vdc,IDQ
= 150 mA, f = 225 MHz
55
65
30
63
62
61
Pin, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
64
60
40
59
58
57
31 32 33 34 35 36 37 38
P
out
, OUTPUT POWER (dBm)
P3dB = 61.33 dBm (1358.31 W)
Actual
Ideal
P1dB = 60.37 dBm (1088.93 W)
56
39
VDD
=50Vdc,IDQ
= 150 mA, f = 225 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
18
28
10
26
24
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
20
IDQ
= 6000 mA
1000 2000
3600 mA
1500 mA
150 mA
375 mA
750 mA
22
VDD
= 50 Vdc, f = 225 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
Figure 9. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=30V
12
28
0
16
24
35 V
20
45 V
200 400 600 800 1000 1200 1400 1600
50 V
40 V
IDQ
= 150 mA, f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
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